Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0260325
Affiliations:
4
Authors:
13
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Institutions Authors Share
Chung Yuan Christian University (CYCU), Taiwan
10.000000
10.000000
 0.77
Wafer Works Corporation, Taiwan
2.000000
 0.15
Lunghwa University of Science and Technology, Taiwan
1.000000
 0.08
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