Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor

Journal:

Applied Physics Letters

Published:

2025-05-12

DOI:

10.1063/5.0260965

Affiliations:

1

Authors:

9

Go to article

Institutions	Authors	Share
Fujian Key Laboratory of Semiconductor Materials and Applications, XMU, China	9.000000	1.00

Interested in Macromolecular and Materials Chemistry?