Assessing electric-field engineering of filamentary-type conduction in Cu/HfO2/Pt memristive devices using the quantum point-contact model

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0261095
Affiliations:
2
Authors:
10
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Institutions Authors Share
Technical University of Darmstadt (TU Darmstadt), Germany
9.000000
 0.90
Autonomous University of Barcelona (UAB), Spain
1.000000
 0.10
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