Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0261673
Affiliations:
5
Authors:
12
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Institutions Authors Share
Stanford University, United States of America (USA)
7.000000
 0.58
Raytheon Technologies Corporation, United States of America (USA)
4.000000
 0.33
QmagiQ, LLC, United States of America (USA)
1.000000
 0.08
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