The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0262354
Affiliations:
3
Authors:
15
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Institutions Authors Share
Xiangtan University (XTU), China
7.500000
 0.50
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China
5.500000
 0.37
Harbin Institute of Technology (HIT), China
2.000000
 0.13
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