Investigation of ultrathin surface passivation layers for GaN: A comparative analysis of Al2O3, SiO2, and SiNx in reducing surface recombination

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0262631
Affiliations:
2
Authors:
14
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Institutions Authors Share
University of Wisconsin-Madison (UW-Madison), United States of America (USA)
9.000000
 0.64
King Abdullah University of Science and Technology (KAUST), Saudi Arabia
5.000000
 0.36
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