High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer

Journal:

Applied Physics Letters

Published:

2025-05-12

DOI:

10.1063/5.0263220

Affiliations:

1

Authors:

7

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Institutions	Authors	Share
King Abdullah University of Science and Technology (KAUST), Saudi Arabia	7.000000	1.00

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