Doping optimization of charge state stability for shallow nitrogen-vacancy center ensembles in HPHT diamonds

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0264044
Affiliations:
2
Authors:
12
Go to article
Institutions Authors Share
Hefei University of Technology (HFUT), China
11.000000
11.000000
 0.92
Illinois Institute of Technology (IIT), United States of America (USA)
1.000000
 0.08
Interested in Quantum Physics?