Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0265442
Affiliations:
2
Authors:
7
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Institutions Authors Share
MOE Key Laboratory of Intelligent Sensing System and Security, HUBU, China
6.000000
 0.86
Dongguan University of Technology (DGUT), China
1.000000
 0.14
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