Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0266142
Affiliations:
2
Authors:
5
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Institutions Authors Share
National Yang Ming Chiao Tung University (NYCU), Taiwan
3.500000
 0.70
Indian Institute of Technology Kanpur (IIT Kanpur), India
1.500000
 0.30
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