Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0266252
Affiliations:
3
Authors:
14
Go to article
Institutions Authors Share
Zhejiang ICsprout Semiconductor Co., Ltd., China
6.000000
 0.43
Zhejiang University (ZJU), China
4.000000
 0.29
IoTMemory Technology, Taiwan
4.000000
 0.29
Interested in Electronics, Sensors and Digital Hardware?