Controlling thermoelectric properties of epitaxial GeSn film/Si by tuning strain and composition

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0266539
Affiliations:
3
Authors:
7
Go to article
Institutions Authors Share
The University of Osaka (UOsaka), Japan
4.000000
 0.57
Shiga University of Medical Science (SUMS), Japan
2.000000
 0.29
National Institute of Advanced Industrial Science and Technology (AIST), Japan
1.000000
 0.14
Interested in Mechanical Engineering?