Quantitative characterization of ZrO2 gate dielectric interface with tellurium

Journal:

Applied Physics Letters

Published:

2025-06-09

DOI:

10.1063/5.0267586

Affiliations:

4

Authors:

5

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Institutions	Authors	Share
University of California, Berkeley (UC Berkeley), United States of America (USA)	1.666667	0.33
Lawrence Berkeley National Laboratory (LBNL), United States of America (USA)	1.666667	0.33
Samsung Electronics Co., Ltd., South Korea	1.333333	0.27
Kavli Energy NanoSciences Institute at Berkeley, United States of America (USA)	0.333333	0.07

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