High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory

Journal:

Applied Physics Letters

Published:

2025-09-08

DOI:

10.1063/5.0267634

Affiliations:

5

Authors:

14

Go to article

Institutions	Authors	Share
Xidian University, China	6.666667	0.48
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	6.333333	0.45
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China	1.000000	0.07

Interested in Nanotechnology?