WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0267728
Affiliations:
2
Authors:
6
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Institutions Authors Share
University of Minnesota (UMN), United States of America (USA)
4.000000
 0.67
University of Michigan (U-M), United States of America (USA)
2.000000
 0.33
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