Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0268057
Affiliations:
3
Authors:
8
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Institutions Authors Share
Paul Drude Institute for Solid State Electronics (PDI), Germany
4.000000
 0.50
Humboldt University of Berlin (HU Berlin), Germany
2.000000
 0.25
Institute Kurz GmbH, Germany
2.000000
 0.25
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