Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0268307
Affiliations:
3
Authors:
7
Go to article
Institutions Authors Share
University of Antwerp (UA), Belgium
3.333333
 0.48
ON Semiconductor Belgium BVBA, Belgium
2.333333
 0.33
Ghent University (UGent), Belgium
1.333333
 0.19
Interested in Analytical Chemistry?