Electron beam-induced reduction of Schottky barrier width for low contact resistance molybdenum disulfide field-effect transistor

Journal:

Applied Physics Letters

Published:

2025-09-01

DOI:

10.1063/5.0268857

Affiliations:

6

Authors:

14

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Institutions	Authors	Share
Guangxi University (GXU), China	5.500000	0.39
MOE Key Laboratory of Artificial Micro- and Nano-structures, WHU, China	4.000000	0.29
North University of China (NUC), China	2.000000	0.14
Ningbo University of Technology, China	1.500000	0.11
Guangxi Technological College of Machinery and Electricity, China	0.500000	0.04
State Key Laboratory of Materials for Integrated Circuits, SIMIT CAS, China	0.500000	0.04

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