Enhanced electrical properties of flexible AlGaN/GaN HEMT arrays via stress engineering

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0268995
Affiliations:
3
Authors:
5
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Institutions Authors Share
Zhejiang Laboratory, China
3.000000
 0.60
Guangdong Institute of Intelligence Science and Technology, China
2.000000
 0.40
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