Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells

Journal:

Applied Physics Letters

Published:

2025-08-04

DOI:

10.1063/5.0269459

Affiliations:

7

Authors:

9

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Institutions	Authors	Share
Fuzhou University (FZU), China	3.000000	0.33
State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua, China	2.000000	0.22
Beijing Academy of Quantum Information Sciences, China	1.000000	0.11
Maynooth University, Ireland	1.000000	0.11
Changzhou University (CZU), China	1.000000	0.11
Institute of Semiconductors (IOS), CAS, China	0.500000	0.06
University of Chinese Academy of Sciences (UCAS), China	0.500000	0.06

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