Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs

Journal:

Applied Physics Letters

Published:

2025-05-26

DOI:

10.1063/5.0269738

Affiliations:

2

Authors:

14

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Institutions	Authors	Share
Xidian University, China	14.000000 14.000000	1.00

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