Semipolar (11 2¯ 2) AlN/AlGaN quasi-vertical Schottky barrier diodes grown on m-sapphire

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0269809
Affiliations:
2
Authors:
8
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Institutions Authors Share
Institute of Semiconductors (IOS), CAS, China
4.000000
 0.50
University of Chinese Academy of Sciences (UCAS), China
4.000000
 0.50
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