Epitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0269810
Affiliations:
2
Authors:
2
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Institutions Authors Share
Research Center for Electronic and Optical Materials, NIMS, Japan
1.000000
 0.50
FLOSFIA Inc., Japan
1.000000
 0.50
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