In–Ga ratio-dependent positive bias stress stability in InGaO based thin-film transistors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0270019
Affiliations:
2
Authors:
8
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Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
4.000000
 0.50
University of Chinese Academy of Sciences (UCAS), China
4.000000
 0.50
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