Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0270230
- Affiliations:
- 2
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| University of Michigan (U-M), United States of America (USA) | 1.00 |