Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0271165
Affiliations:
3
Authors:
7
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Institutions Authors Share
University of California, Santa Barbara (UCSB), United States of America (USA)
5.000000
 0.71
AlbaNova University Center - Stockholm Center for Physics, Astronomy and Biotechnology (AlbaNova), Sweden
2.000000
 0.29
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