Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0271394
Affiliations:
2
Authors:
13
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Institutions Authors Share
Interuniversity Microelectronics Centre (IMEC), Belgium
11.000000
11.000000
 0.85
Catholic University of Leuven (KU Leuven), Belgium
2.000000
 0.15
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