Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures

Journal:

Applied Physics Letters

Published:

2025-06-23

DOI:

10.1063/5.0271499

Affiliations:

5

Authors:

10

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Institutions	Authors	Share
Vienna University of Technology (TU Wien), Austria	6.000000	0.60
Swiss Federal Laboratories for Materials Science and Technology (EMPA), Switzerland	1.500000	0.15
Institute for Nanoscience and Cryogenics (INAC), France	1.000000	0.10
Tyndall National Institute (TNI), Ireland	1.000000	0.10
RWTH Aachen University (RWTH Aachen), Germany	0.500000	0.05

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