Enhancement in tunnel magnetoresistance for magnetic tunnel junctions in Mn based Heusler compounds

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0271566
Affiliations:
3
Authors:
9
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Institutions Authors Share
IBM Research - Almaden, United States of America (USA)
6.000000
 0.67
Samsung Semiconductor, Inc., United States of America (USA)
2.000000
 0.22
Max Planck Institute of Microstructure Physics (MPI-MSP), Germany
1.000000
 0.11
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