Impedance-dependent degradation in GaN HEMTs under high-voltage RF stress: Electro-thermal and trap mechanisms

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0271954
Affiliations:
5
Authors:
14
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Institutions Authors Share
Nanjing University (NJU), China
9.000000
 0.64
Nanjing Electronic Devices Institute (CETC55), China
3.500000
 0.25
Hunan University (HNU), China
0.500000
 0.04
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China
0.500000
 0.04
Xiamen University (XMU), China
0.500000
 0.04
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