Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor

Journal:

Applied Physics Letters

Published:

2025-10-06

DOI:

10.1063/5.0272041

Affiliations:

4

Authors:

6

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Institutions	Authors	Share
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	2.500000	0.42
Research Center for Electronic and Optical Materials, NIMS, Japan	2.000000	0.33
International Center for Young Scientists (ICYS), NIMS, Japan	1.000000	0.17
University of Tsukuba, Japan	0.500000	0.08

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