Deep-level point defects at Ga sites in dilute AlxGa1−xN alloys

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0272389
Affiliations:
3
Authors:
9
Institutions Authors Share
The University of Manchester (UoM), United Kingdom (UK)
5.000000
0.56
Institute of High Pressure Physics (UNIPRESS), PAS, Poland
3.000000
0.33
Institute of Nanostructures, Nanomodelling and Nanofabrication (I3N), Portugal
1.000000
0.11