Modulation of charge transport and rectification behavior in CsSnI3 thin films through A-site cation engineering

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0272415
Affiliations:
4
Authors:
12
Institutions Authors Share
National University of Science and Technology (MISIS), Russia
9.000000
0.75
A.N. Frumkin Institute of Physical Chemistry and Electrochemistry (IPCE), RAS, Russia
2.500000
0.21
National Research University Higher School of Economics (HSE), Russia
0.500000
0.04