Atmospheric neutron-induced single-event burnout in β-Ga2O3 Schottky barrier diode

Journal:

Applied Physics Letters

Published:

2025-06-16

DOI:

10.1063/5.0273065

Affiliations:

5

Authors:

12

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Institutions	Authors	Share
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China	5.500000	0.46
Shandong University (SDU), China	3.500000	0.29
Xidian University, China	1.000000	0.08
University of Electronic Science and Technology of China (UESTC), China	1.000000	0.08
Hebei Semiconductor Research Institute (CETC13), China	1.000000	0.08

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