Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications

Journal:
Applied Physics Letters
Published:
Affiliations:
1
Authors:
4
Institutions Authors Share
State University of New York at Stony Brook (SUNY Stony Brook), United States of America (USA)
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