Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2−x: Al memristors
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0273610
- Affiliations:
- 2
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Jiangsu University (JSU), China | 0.89 | |
| Jiangsu University of Science and Technology (JUST), China | 0.11 |