Electrical stress-induced damage in TiN/Ti/HfO2/W memristors: The critical role of voltage polarity and vacuum condition

Journal:

Applied Physics Letters

Published:

2025-07-21

DOI:

10.1063/5.0273851

Affiliations:

4

Authors:

6

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Institutions	Authors	Share
Institute of Microelectronics Barcelona (IMB), CSIC, Spain	4.333333	0.72
Autonomous University of Barcelona (UAB), Spain	1.000000	0.17
Spanish National Research Council (CSIC), Spain	0.333333	0.06
Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST, Spain	0.333333	0.06

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