Quantum and dielectric confinement on phosphorus donors in silicon nano-transistors for high-temperature single-electron tunneling

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0273866
Affiliations:
3
Authors:
4
Institutions Authors Share
Indian Institute of Technology Roorkee (IIT Roorkee), India
3.000000
0.75
Shizuoka University, Japan
1.000000
0.25