<atl>High-b iκ/i /b HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device</atl>

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0274127
Affiliations:
3
Authors:
10
Go to article
Institutions Authors Share
National Tsing Hua University (NTHU), Taiwan
7.000000
 0.70
Taiwan Semiconductor Research Institute (TSRI), Taiwan
3.000000
 0.30
Interested in Macromolecular and Materials Chemistry?