Electronic properties of extended surface defects in homoepitaxial GaN diodes

Journal:

Applied Physics Letters

Published:

2025-07-21

DOI:

10.1063/5.0274143

Affiliations:

5

Authors:

9

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Institutions	Authors	Share
National Institute of Standards and Technology (NIST), United States of America (USA)	6.000000	0.67
USN Naval Research Laboratory (NRL), United States of America (USA)	2.000000	0.22
University of Florida (UF), United States of America (USA)	1.000000	0.11

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