Electronic properties of extended surface defects in homoepitaxial GaN diodes

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0274143
Affiliations:
5
Authors:
9
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Institutions Authors Share
National Institute of Standards and Technology (NIST), United States of America (USA)
6.000000
 0.67
USN Naval Research Laboratory (NRL), United States of America (USA)
2.000000
 0.22
University of Florida (UF), United States of America (USA)
1.000000
 0.11
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