Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0274521
Affiliations:
4
Authors:
8
Institutions Authors Share
Nagoya University, Japan
6.000000
0.75
University of Tsukuba, Japan
1.000000
0.13
Toyota Central Research and Development Laboratories, Inc., Japan
1.000000
0.13