GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0274708
- Affiliations:
- 1
- Authors:
- 6
| Institutions | Authors | Share |
|---|---|---|
| Zhejiang University (ZJU), China | 1.00 |