Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0274798
Affiliations:
3
Authors:
9
Go to article
Institutions Authors Share
University of California, Santa Barbara (UCSB), United States of America (USA)
7.000000
 0.78
King Abdulaziz City for Science and Technology (KACST), Saudi Arabia
2.000000
 0.22
Interested in Atomic, Molecular and Optical Physics?