Over 450 V breakdown voltage in diamond vertical Schottky barrier diodes with anodic self-aligned mesa termination
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0274905
- Affiliations:
- 2
- Authors:
- 9
| Institutions | Authors | Share |
|---|---|---|
| Xi'an Jiaotong University (XJTU), China | 1.00 |