Ultralow threshold voltage in an epitaxial p-GeFeTe/n-Si heterojunction enabled by magnetic field modulation

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0275098
Affiliations:
2
Authors:
2
Institutions Authors Share
Yantai University (YTU), China
1.000000
0.50
Changsha University (CCSU), China
1.000000
0.50