Adjusting Schottky barrier height and enhancing diode performances in 1T-MoT2/WSeTe (MoSeTe) heterojunctions by interlayer flipping

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0275793
Affiliations:
2
Authors:
8
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Institutions Authors Share
Changsha University of Science and Technology (CSUST), China
7.000000
 0.88
Hunan University (HNU), China
1.000000
 0.13
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