Demonstration of β-Ga2O3 vertical Schottky barrier diode with mesa termination assisted partially suspended field plate on MOCVD-grown epitaxial wafer

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0276330
Affiliations:
4
Authors:
8
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Institutions Authors Share
Fuzhou University (FZU), China
4.000000
 0.50
Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China
3.000000
 0.38
University of Chinese Academy of Sciences (UCAS), China
1.000000
 0.13
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