2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0276560
Affiliations:
4
Authors:
9
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Institutions Authors Share
Fuzhou University (FZU), China
5.000000
 0.56
Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China
3.000000
 0.33
University of Chinese Academy of Sciences (UCAS), China
1.000000
 0.11
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