Enhanced performance of normally-off AlGaN/GaN MOS-HEMTs taking advantage of extreme-k BaTiO3 with prominent dielectric polarization

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0277628
Affiliations:
2
Authors:
11
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Institutions Authors Share
Nanjing University (NJU), China
10.500000
10.500000
 0.95
Xiamen University (XMU), China
0.500000
 0.05
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