Effects of plasma treatments on Ohmic formation for N polarity of n+-GaN substrates
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0278116
- Affiliations:
- 3
- Authors:
- 7
| Institutions | Authors | Share |
|---|---|---|
| State Key Laboratory of Radio Frequency Heterogeneous Integration, China | 0.71 | |
| Red and Blue Microelectronics (Shanghai) Co., Ltd, China | 0.14 | |
| Unilumin Group, China | 0.14 |